|
Your search returned 32 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Transactions On Electron Devices
|
Year : 2003 Volume number : 50 Issue: 12 |
Co Gamma Irradiation Effects On N-Gan Schottky Diodes
(Article)
Subject:
Gallium Compound
Author:
G.A.Umana
Membreno
page:
2326
-
2334
Temperature Dependence Of Avalanche Multiplication In Inp-Based Hbts With Ingas/Inp
(Article)
Subject:
Avalanche Breakdown
,
Double Heterojunction Bipolar Transistor (Hbt)
Author:
W. P
Neo
page:
2335
-
2343
Electrical Characteristics Of Milc Poly-Si Tfts With Long Ni-Offset Structure
(Article)
Subject:
Dopant Effect
,
Low Temperature
Author:
Gi-Bum
Kim
page:
2344
-
2347
Spacer Visibility Problem In Field Emission Displays Due To Surface Contamination
(Article)
Subject:
Electron Emission
Author:
Electron
Xie
page:
2348
-
2352
640x512 Pixel Long -Wavelength Infrared Narrowband, Multiband, And Broadband Qwip Focal Plane Arrays
(Article)
Subject:
Broadband
,
Focal Plane Processing
Author:
Sarath D.
Gunapala
Sumith V.
Bandara
page:
2353
-
2360
Characterization And Deblurring Of Lateral Crosstalk In Cmos Image Sensors
(Article)
Subject:
Active Pixel Sensors
,
Cmos Image Sensor
Author:
Joey
Shah
M.Ed
Jernigan
page:
2361
-
2368
Object Location And Centroiding Techniques With Cmos Active Pixel Sensors
(Article)
Subject:
Active Pixel Sensors
Author:
Keivan
Noghabai
page:
2369
-
2377
Characteristics Of Integrated Qwip-Hbt-Led Up-Converter
(Article)
Subject:
Focal Plain Array
Author:
Serge
Oktyabrsky
page:
2378
-
2387
Improved 634 Nm Mqw Algainp Leds Performance With Novel Tensile Strain Barrier Reducing Layer
(Article)
Subject:
Algainp
,
Led
Author:
Juh-Yuh
Su
page:
2388
-
2392
A New Approach To Model Nonquasi-Static (Nqs) Effects For Mosfets-Part-I: Large-Signal Analysis
(Article)
Subject:
Large-Signal Modeling
Author:
Ananda
Roy
page:
2393
-
2400
A New Appoach To Model Nonquasi-Static (Nqs) Effects For Mosfets-Part-Ii: Small-Signal Analysis
(Article)
Subject:
Mosfet
,
Small-Signal Mos
Author:
Ananda
Roy
page:
2401
-
2407
A Capacitorles Double Gate Dram Technology For Sub-100-Nm Embedded And Stand-Alone Memory Applications
(Article)
Subject:
Double-Gate
,
Mosfet
Author:
Charles
Kuo
page:
2409
-
2416
High-Speed Scaled - Down Self-Aligned Seg Sige Hbts
(Article)
Subject:
Bipolar Transistor
,
Emitter Coupled Logic
Author:
K
Washio
page:
2417
-
2424
Analysis Of Electrical Characteristics Of Gate Overlapped Lightly Doped Drain (Goldd) Polysilicon Thin-Film Transistors With Different Ldd Doping Concentration
(Article)
Subject:
Gate Overlapped Lightly Doped Drain
Author:
A.
Vonfiglietti
page:
2425
-
2444
Physically Based Modeling Of Lowfield Electron Mobility In Ultrathin Single-And Double -Gate Soi N-Mosfets
(Article)
Subject:
Mobility
,
Modeling
Author:
D
Esseni
E.
Abramol
page:
2445
-
2453
Self-Aligned Nickel Cobalt Tantalum Nitride Stacked -Gate Pmosfets Fabricated With Low Temperature Process After Metal Electrode Deposition
(Article)
Subject:
Metal Gate
Author:
James Pan
Woo
page:
2456
-
2460
Scaling And Strain Dependence Of Nanoscale Strained - Si P-Mosfet Performance
(Article)
Subject:
Ballistic
,
Monte Carlo Methods
Author:
F.M.
Bufler
page:
2461
-
2466
Monte Carlo Simulations Of Double - Gate Mosfets
(Article)
Subject:
Double-Gate
,
Interface
Author:
Gulzar A.
Kathawala
page:
2467
-
2473
Pulsed Tunnel Programming Of Nonvolatile Memories
(Article)
Subject:
Nonvolatile
,
Programming
Author:
I.
Irrera
page:
2474
-
2480
Impact Of Lateral Asymmmetric Channel Doping On Deep Submicrometer Mixed-Signal Device And Circuit Performance
(Article)
Subject:
Analog
,
Cmos
Author:
K.
Narasimhulu
page:
2481
-
2483
Generation-Recombination Noise In The Near Fully Depleted Soimox Soi N-Mosfet-Physical Characteristics And Modeling
(Article)
Subject:
Generation-Recombination
Author:
Z.
Lun
page:
2490
-
2498
Noise Model Of Gate-Leakage Current In Ultrathin Oxide Mosfets
(Article)
Subject:
Noise
Author:
Jhong S
Lee
page:
2499
-
2506
Direct Measurements Of Trap Density In Sige/Si Hetero-Interface And Correlation Betwween The Trap Density And Low-Frequency Noise In Sige Channel Pmosfets
(Article)
Subject:
Charge Pumping Technique
Author:
Toshiaki
Tsuchiya
page:
2507
-
2512
I/F Noise In Si And Sio.7 Geo.3 Mosfets
(Article)
Subject:
Low Frequency Circuits
Author:
Martin Von
Haartman
page:
2513
-
2519
Impact Of The High Vertical Electric Field On Low-Frequency Noise In Thin -Gate Oxide Mosfets
(Article)
Subject:
Noise
Author:
A
Mercha
page:
2520
-
2527
High Breakdown Voltagealgan-Gan Power-Hemt Design And High Current Density Switching Behavior
(Article)
Subject:
High Voltage
,
Devices
Author:
Sarath D.
Gunapala
page:
2528
-
2531
Investigation Of Hydrogen -Sensing Poperties Of Pd/Algaas-Based Schottky Diodes
(Article)
Subject:
Barrier
Author:
Yan-Ying
Tsai
page:
2532
-
2539
"Powerholes " And Nonlinear Forward And Backward Wave Gain Competition In Helix Traveling -Wave Tubes
(Article)
Subject:
Backward Euler
,
Microwaves
Author:
David
Chernin
page:
2540
-
2547
Electrical And Optimal Characterization Of Field Emitter Tips With Integrated Vertically Stacked Focus
(Article)
Subject:
Bpm (Bpm)
Author:
L.
Dvorson
page:
2548
-
2558
Modeling The Fringing Electric Field Effect On The Threshold Voltage Of Fd Soi Nmos Devices With The Ldd/Sidewall Oxide Spacer Structure
(Article)
Subject:
Devices
,
Fringe Patterns
Author:
L-F
Lin
page:
2559
-
2578
Resonant Gate Tunneling Current In Double-Gate Soi: A Simulation Study
(Article)
Subject:
Asymmetrical Constants
Author:
Chang-Hoon
Choi
page:
2579
-
2580
Novel X-And Gamma-Ray Sensors Based On Bulk -Grown Silicon-Germantium
(Article)
Subject:
Bulking Agent Impact
Author:
A.
Ruzin
page:
2581
-
2583
|
|
| | |