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Magazine Name : Ieee Transactions On Electron Devices

Year : 2003 Volume number : 50 Issue: 12

Co Gamma Irradiation Effects On N-Gan Schottky Diodes (Article)
Subject: Gallium Compound
Author: G.A.Umana Membreno     
page:      2326 - 2334
Temperature Dependence Of Avalanche Multiplication In Inp-Based Hbts With Ingas/Inp (Article)
Subject: Avalanche Breakdown , Double Heterojunction Bipolar Transistor (Hbt)
Author: W. P Neo     
page:      2335 - 2343
Electrical Characteristics Of Milc Poly-Si Tfts With Long Ni-Offset Structure (Article)
Subject: Dopant Effect , Low Temperature
Author: Gi-Bum Kim     
page:      2344 - 2347
Spacer Visibility Problem In Field Emission Displays Due To Surface Contamination (Article)
Subject: Electron Emission
Author: Electron Xie     
page:      2348 - 2352
640x512 Pixel Long -Wavelength Infrared Narrowband, Multiband, And Broadband Qwip Focal Plane Arrays (Article)
Subject: Broadband , Focal Plane Processing
Author: Sarath D. Gunapala      Sumith V. Bandara     
page:      2353 - 2360
Characterization And Deblurring Of Lateral Crosstalk In Cmos Image Sensors (Article)
Subject: Active Pixel Sensors , Cmos Image Sensor
Author: Joey Shah      M.Ed Jernigan     
page:      2361 - 2368
Object Location And Centroiding Techniques With Cmos Active Pixel Sensors (Article)
Subject: Active Pixel Sensors
Author: Keivan Noghabai     
page:      2369 - 2377
Characteristics Of Integrated Qwip-Hbt-Led Up-Converter (Article)
Subject: Focal Plain Array
Author: Serge Oktyabrsky     
page:      2378 - 2387
Improved 634 Nm Mqw Algainp Leds Performance With Novel Tensile Strain Barrier Reducing Layer (Article)
Subject: Algainp , Led
Author: Juh-Yuh Su     
page:      2388 - 2392
A New Approach To Model Nonquasi-Static (Nqs) Effects For Mosfets-Part-I: Large-Signal Analysis (Article)
Subject: Large-Signal Modeling
Author: Ananda Roy     
page:      2393 - 2400
A New Appoach To Model Nonquasi-Static (Nqs) Effects For Mosfets-Part-Ii: Small-Signal Analysis (Article)
Subject: Mosfet , Small-Signal Mos
Author: Ananda Roy     
page:      2401 - 2407
A Capacitorles Double Gate Dram Technology For Sub-100-Nm Embedded And Stand-Alone Memory Applications (Article)
Subject: Double-Gate , Mosfet
Author: Charles Kuo     
page:      2409 - 2416
High-Speed Scaled - Down Self-Aligned Seg Sige Hbts (Article)
Subject: Bipolar Transistor , Emitter Coupled Logic
Author: K Washio     
page:      2417 - 2424
Analysis Of Electrical Characteristics Of Gate Overlapped Lightly Doped Drain (Goldd) Polysilicon Thin-Film Transistors With Different Ldd Doping Concentration (Article)
Subject: Gate Overlapped Lightly Doped Drain
Author: A. Vonfiglietti     
page:      2425 - 2444
Physically Based Modeling Of Lowfield Electron Mobility In Ultrathin Single-And Double -Gate Soi N-Mosfets (Article)
Subject: Mobility , Modeling
Author: D Esseni      E. Abramol     
page:      2445 - 2453
Self-Aligned Nickel Cobalt Tantalum Nitride Stacked -Gate Pmosfets Fabricated With Low Temperature Process After Metal Electrode Deposition (Article)
Subject: Metal Gate
Author: James Pan Woo     
page:      2456 - 2460
Scaling And Strain Dependence Of Nanoscale Strained - Si P-Mosfet Performance (Article)
Subject: Ballistic , Monte Carlo Methods
Author: F.M. Bufler     
page:      2461 - 2466
Monte Carlo Simulations Of Double - Gate Mosfets (Article)
Subject: Double-Gate , Interface
Author: Gulzar A. Kathawala     
page:      2467 - 2473
Pulsed Tunnel Programming Of Nonvolatile Memories (Article)
Subject: Nonvolatile , Programming
Author: I. Irrera     
page:      2474 - 2480
Impact Of Lateral Asymmmetric Channel Doping On Deep Submicrometer Mixed-Signal Device And Circuit Performance (Article)
Subject: Analog , Cmos
Author: K. Narasimhulu     
page:      2481 - 2483
Generation-Recombination Noise In The Near Fully Depleted Soimox Soi N-Mosfet-Physical Characteristics And Modeling (Article)
Subject: Generation-Recombination
Author: Z. Lun     
page:      2490 - 2498
Noise Model Of Gate-Leakage Current In Ultrathin Oxide Mosfets (Article)
Subject: Noise
Author: Jhong S Lee     
page:      2499 - 2506
Direct Measurements Of Trap Density In Sige/Si Hetero-Interface And Correlation Betwween The Trap Density And Low-Frequency Noise In Sige Channel Pmosfets (Article)
Subject: Charge Pumping Technique
Author: Toshiaki Tsuchiya     
page:      2507 - 2512
I/F Noise In Si And Sio.7 Geo.3 Mosfets (Article)
Subject: Low Frequency Circuits
Author: Martin Von Haartman     
page:      2513 - 2519
Impact Of The High Vertical Electric Field On Low-Frequency Noise In Thin -Gate Oxide Mosfets (Article)
Subject: Noise
Author: A Mercha     
page:      2520 - 2527
High Breakdown Voltagealgan-Gan Power-Hemt Design And High Current Density Switching Behavior (Article)
Subject: High Voltage , Devices
Author: Sarath D. Gunapala     
page:      2528 - 2531
Investigation Of Hydrogen -Sensing Poperties Of Pd/Algaas-Based Schottky Diodes (Article)
Subject: Barrier
Author: Yan-Ying Tsai     
page:      2532 - 2539
"Powerholes " And Nonlinear Forward And Backward Wave Gain Competition In Helix Traveling -Wave Tubes (Article)
Subject: Backward Euler , Microwaves
Author: David Chernin     
page:      2540 - 2547
Electrical And Optimal Characterization Of Field Emitter Tips With Integrated Vertically Stacked Focus (Article)
Subject: Bpm (Bpm)
Author: L. Dvorson     
page:      2548 - 2558
Modeling The Fringing Electric Field Effect On The Threshold Voltage Of Fd Soi Nmos Devices With The Ldd/Sidewall Oxide Spacer Structure (Article)
Subject: Devices , Fringe Patterns
Author: L-F Lin     
page:      2559 - 2578
Resonant Gate Tunneling Current In Double-Gate Soi: A Simulation Study (Article)
Subject: Asymmetrical Constants
Author: Chang-Hoon Choi     
page:      2579 - 2580
Novel X-And Gamma-Ray Sensors Based On Bulk -Grown Silicon-Germantium (Article)
Subject: Bulking Agent Impact
Author: A. Ruzin     
page:      2581 - 2583